Samsung Electronics Co., Ltd., the world leader in advanced memory technology, recently announced that it has started mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage solution which will be used in next-generation mobile devices. For this, the company will use 64-layer 512GB V-NAND chips. The 512GB eUFS package will give unparalleled storage capacity and also will enhance the performance of the upcoming devices of Samsung.
The Executive vice president of Memory Sales & Marketing at Samsung Electronics, Jaesoo Han said, “The new Samsung 512GB eUFS provides the best-embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards.” He further added that “By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world.”
As per the report, the new high-capacity eUFS enables a flagship smartphone to store around 130 4K Ultra HD video clips of a 10-minute duration having the resolution of 3840×2160.
It comes with strong read and writes performance. It can catch up to 860 megabytes per second (MB/s) and 255MB/s respectively. A 5GB-equivalent full HD video clip can be transferred to an SSD in just six seconds. There is no doubt that it will give lighting fast performance.
The latest eUFS can read 42,000 IOPS and write 40,000 IOPS, which are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card. Now the smartphone users can enjoy seamless multimedia experiences in their smartphones like high-resolution burst shooting, searching and downloading videos in dual-app viewing mode.
The company has not informed when it will introduce this high-speed 512GB storage for the devices. As the production has been started, it is expected that this will be available in the coming year.
